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| FJP5200 -- Audio Power Amplifier July 2008 FJP5200 Audio Power Amplifier Features * * * * High Current Capability: IC = 15A High Power Dissipation Wide S.O.A Complement to FJP1943 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Symbol VCBO VCEO VEBO IC IB TJ, TSTG Collector-Base Voltage Ta = 25C unless otherwise noted Parameter Ratings 230 230 5 15 1.5 - 50 ~ +150 Units V V V A A C Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD Ta=25C unless otherwise noted Parameter Total Device Dissipation(TC=25C) Derate above 25C Thermal Resistance, Junction to Case Max. 100 0.8 1.25 Units W W/C C/W RJC * With infinite heatsink. * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". (c) 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 1 FJP5200 -- Audio Power Amplifier Electrical Characteristics* Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain* DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=5mA, IE=0 IC=10mA, RBE= IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz 55 35 60 0.4 1.0 30 360 3.0 1.5 V V MHz pF Min. 230 230 5 5.0 5.0 160 Typ. Max. Units V V V A A * Pulse Test: Pulse Width300s, Duty Cycle2% *hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 (c) 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 2 FJP5200 -- Audio Power Amplifier Typical Characteristics 16 IB=200mA IC[A], COLLECTOR CURRENT 14 12 10 8 6 4 2 0 -2 -2 0 2 4 6 8 10 12 14 hFE, DC CURRENT GAIN IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA Vce=5V Tj=125? Tj=25? 100 Tj=-25? IB = 0 16 18 20 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain Vbe(sat)[mV], SATURATION VOLTAGE Vce(sat)[mV], SATURATION VOLTAGE Ic=10Ib Ic=10Ib 1000 1000 Tj=-25? Tj=25? 100 Tj=125? Tj=25? Tj=-25? 10 0.1 1 10 Tj=125? 0.1 1 10 Ic[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage Transient Thermal Resistance, Rthjc[ C / W] 10 1.2 IC[A], COLLECTOR CURRENT VCE = 5V 8 o 1.0 0.8 6 0.6 4 0.4 2 0.2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1E-6 1E-5 1E-4 1E-3 0.01 o 0.1 1 VBE[V], BASE-EMITTER VOLTAGE Case Temperature, TC[ C] Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance (c) 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 3 FJP5200 -- Audio Power Amplifier Mechanical Dimensions TO220 (c) 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 4 FJP5200 Audio Power Amplifier (c) 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 5 |
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